X-Ray Residual Stress Measurment of AlN Films, IV. Residual Stress Measurement in AlN Film Deposited by Alternating Sputtering Method.

Study of Properties of AlN Thin Films Deposited by Reactive Magnetron Sputtering

Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by DC magnetron sputtering technique at different power variation. The X-ray diffraction and Fourier transform infrared spectroscopy (FTIR) study revealed the formation of the AlN phase. The optical characteristics of films, such as refractiveindex, extinction coefficient, and average thickness, were calcu...

Effect of Thickness on Structural and Morphological Properties of AlN Films Prepared Using Single Ion Beam Sputtering

Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...

Depth-resolved residual stress evaluation from X-ray diffraction measurement data using the approximate inverse method

The paper deals with the depth determination of residual stress states from diffraction data. First an historical overview of the known approaches is given. Then we apply the approximate inverse method to this problem. This method is known to be very efficient and stable with respect to noise-contaminated data. It is even possible to prove convergence and it allows an error estimate of the calc...

Recent Advances in the Measurement of Residual Stress by X-Ray Diffraction

Residual Stress Variation in Polysilicon Thin Films

This paper compares the use of four mechanical methods for characterization of residual stress variation in low pressure chemical vapor deposited (LPCVD) polysilicon thin films deposited, doped, and annealed under different conditions. Stress was determined using buckling structures, vibrating microstructures, static rotating structures and the wafer curvature method. After deposition of 1.0 μm...